Breakdown of universal mobility curves in sub-100-nm MOSFETs

We explore the breakdown of universal mobility behavior in sub-100-nm Si MOSFETs, using a novel three-dimensional (3-D) statistical simulation approach. In this approach, carrier trajectories in the bulk are treated via 3-D Brownian dynamics, while the carrier-interface roughness scattering is treated using a novel empirical model

AdS/CFT and Randall-Sundrum Model Without a Brane

We reformulate the Randall-Sundrum (RS) model on the compactified AdS by adding a term proportional to the area of the boundary to the usual gravity action with a negative cosmological constant and show that gravity can still be localized on the boundary without introducing singular brane sources. The boundary conditions now follow from the field equations, which are obtained by letting the induced metric vary on the boundary. This approach gives similar modes that are obtained in [1] and clarifies the complementarity of the RS and the AdS/CFT pictures. Normalizability of these modes is checked by an inner-product in the space of linearized perturbations. The same conclusions hold for a massless scalar field in the bulk.Comment: Comments and references added, to apear in JHE

A Note on Supergravity Solutions for Partially Localized Intersecting Branes

Using the method developed by Cherkis and Hashimoto we construct partially localized D3/D5(2), D4/D4(2) and M5/M5(3) supergravity solutions where one of the harmonic functions is given in an integral form. This is a generalization of the already known near-horizon solutions. The method fails for certain intersections such as D1/D5(1) which is consistent with the previous no-go theorems. We point out some possible ways of bypassing these results.Comment: 9 pages, 2 figures, revtex

RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation

A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed

Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs. The line edge roughness is introduced using a Fourier synthesis technique based on the power spectrum of a Gaussian autocorrelation function. In carefully designed simulation experiments, we investigate the impact of the rms amplitude /spl Delta/ and the correlation length /spl Lambda/ on the intrinsic parameter fluctuations in well scaled, but simple devices with fixed geometry as well as the channel length and width dependence of the fluctuations at fixed LER parameters. For the first time, we superimpose in the simulations LER and random discrete dopants and investigate their relative contribution to the intrinsic parameter fluctuations in the investigated devices. For particular MOSFET geometries, we were able to identify the regions where each of these two sources of intrinsic parameter fluctuations dominates

Design of DG-MOSFET's for high linearity performance

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